Large crystal sapphire opticsSCHMID, F; KHATTAK, C. P.Laser focus/electro-optics. 1983, Vol 19, Num 9, pp 147-152Article

Growth of near-net-shaped sapphire domes using the heat exchanger methodKHATTAK, C. P; SCHMID, F.Materials letters (General ed.). 1989, Vol 7, Num 9-10, pp 318-321, issn 0167-577XArticle

Sapphire sparkles in many optical elementsSCHMID, F; KHATTAK, C. P; FELT, D. M et al.Laser focus world. 1996, Vol 32, Num 6, pp 167-174, issn 1043-8092, 6 p.Article

Producing large sapphire for optical applicationsSCHMID, F; KHATTAK, C. P; FELT, D. M et al.American Ceramic Society bulletin. 1994, Vol 73, Num 2, pp 39-44, issn 0002-7812Article

Titanium sapphire laser characteristicsRAPOPORT, W. R; KHATTAK, C. P.Applied optics. 1988, Vol 27, Num 13, pp 2677-2684, issn 0003-6935Article

Current status of HE m and FAST technologySCHMID, F; KHATTAK, C. P; ILES, P. A et al.Photovoltaic solar energy conference. 5. 1984, pp 1019-1026Conference Paper

Influence of Ta doping on the growth and superconducting properties of YBa₂Cu₃O_6+δ crystalsRAO, S. M; CHEN, K. M; LAW, K. S et al.Journal of crystal growth. 1994, Vol 139, Num 1-2, pp 190-195, issn 0022-0248Article

Influence of KCl on the growth of YBa₂Cu₃O_6+δ from high temperature solutionsRAO, S. M; CHANG, R. H; LAW, K. S et al.Journal of crystal growth. 1996, Vol 162, Num 1-2, pp 48-54, issn 0022-0248Article

Refinements in the determination of minority-carrier diffusion length measurements of polycrystalline silicon materials by the surface photovoltage methodRUYUE YAN; WANG, F. F. Y; CORDERMAN, R. R et al.Journal of applied physics. 1987, Vol 62, Num 8, pp 3249-3252, issn 0021-8979Article

Efficient slicing of GaAs by the fixed abrasive slicing technique (FAST)SMITH, M. B; SCHMID, F; KHATTAK, C. P et al.Photovoltaic specialists conference. 19. 1987, pp 417-420Conference Paper